The Effect of Doping and the Thickness of the Layers on CIGS Solar Cell Efficiency

Journal of Optoelectronical Nanostructures

مقاله 2، دوره 1، شماره 1، خرداد و تیر 2016، صفحه 9-24   

نوع مقاله: Articles

نویسندگان

Sayed Mohammad Sadegh Hashemi Nassab؛ Mohsen Imanieh^* ؛ Abbas Kamaly

Department ofElectrical Engineering, Fasa Branch, Islamic Azad University, Fasa, Iran.

تاریخ دریافت: 25 خرداد 1395،  تاریخ پذیرش: 25 خرداد 1395 

چکیده

The main problemswith the use of fossil fuels is the restrictions on their access and the detrimental consequences of their use which causes a threat to human health and quality of life. Consequently, the use of other energy sources has become necessary. Renewable Energy as a permanent and clean energy source is an answer to this problem. One such energy source includes photovoltaic solar energy that is widely available as a reliable energy source. Research and Development of Photovoltaic Energy in general, will reduce costs and improve efficiency in both areas. CIGS solar cells have higher efficiency in comparison with other cells. Ion implantation and doping technique offers the unique structure of a solar cells. This paper will examine the performance of solar cells with Cu In_1-x Ga_x Se₂ structure. This willbe performed by Silvaco software. Effect of doping phosphorus (p) and Natrium (Na), as well as the value of x and thethickness of the various layers of the solar cell, on the efficiency of the cell, have been studied.

کلیدواژه‌ها

absorber layer؛ Efficiency؛ ion implantation؛ Solar Cells؛ Thin Film

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