Quantum modeling of light absorption in graphene based photo-transistors

Journal of Optoelectronical Nanostructures

مقاله 2، دوره 2، شماره 1 - شماره پیاپی 4، فروردین و اردیبهشت 2017، صفحه 9-20   

نوع مقاله: Articles

نویسندگان

Hamid Faezinia¹؛ Mahdi zavvari^{* 2}

¹Department of Electronic Engineering, Tabriz Branch, Islamic Azad University, Tabriz, Iran

²Department of Electronic Engineering, Urmia Branch, Islamic Azad University, Urmia, Iran

تاریخ دریافت: 02 دی 1395،  تاریخ بازنگری: 30 دی 1395،  تاریخ پذیرش: 05 اسفند 1395 

چکیده

Graphene based optical devices are highly recommended and interested for integrated optical circuits. As a main component of an optical link, a photodetector based on graphene nano-ribbons is proposed and studied. A quantum transport model is presented for simulation of a graphene nano-ribbon (GNR) -based photo-transistor based on non-equilibrium Green’s function method. In the proposed model a self-energy matrix is introduced which takes the effect of optical absorption in GNR channel into account. The self-energy matrix is treated as a scattering matrix which leads to creation of carriers. The transition matrix element is calculated for optical absorption in graphene channel and is used to obtain the optical interaction self-energy. The resulting self-energy matrix is added to retarded Green’s function and is used in transport equations for calculation of current flow in the photo-transistor. By considering the effect of optical radiation, the dark and photocurrent of detector are calculated and results are used for calculation of responsivity.

کلیدواژه‌ها

Non-equilibrium Green’s function؛ Graphene nano-ribbon؛ Photo-transistor؛ Self-energy

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