Energy band correction due to one dimension tension in phosphorene

Journal of Optoelectronical Nanostructures

مقاله 7، دوره 2، شماره 1 - شماره پیاپی 4، فروردین و اردیبهشت 2017، صفحه 59-68   

نوع مقاله: Articles

نویسندگان

Ali Izadparast^* ؛ Peyman Sahebsara

Department of Physics, Isfahan University of Technology. Isfahan, Iran

تاریخ دریافت: 05 دی 1396،  تاریخ بازنگری: 03 بهمن 1395،  تاریخ پذیرش: 02 اسفند 1395 

چکیده

Among graphene-like family, phosphorene is a typical semiconducting layered material, which can also be a superconductor in low temperature. Applying pressure or tension on phosphorene lattice results in changing the hopping terms, which change the energy bands of the material. In this research we use the tight-binding Hamiltonian, including relevant hopping terms, to calculate energy bands of normal and under tension phosphorene. Our results show that the energy gap decreases by decreasing / from 3 to 2, and finally the gap disappears.

کلیدواژه‌ها

phosphorene؛ Band Structure؛ electron conductivity؛ tension؛ energy band gap

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