Scattering mechanism of nonmagnetic phase on nano diluted magnetic semiconductors (DMS)

Journal of Optoelectronical Nanostructures

مقاله 3، دوره 2، شماره 2 - شماره پیاپی 5، مرداد و شهریور 2017، صفحه 19-28   

نوع مقاله: Articles

نویسنده

mohammad Yuonesi^*

Department of Physics, Ayatollah Amoli Branch, Islamic Azad University, Amol, Iran

تاریخ دریافت: 20 اسفند 1395،  تاریخ بازنگری: 22 مرداد 1396،  تاریخ پذیرش: 31 مرداد 1396 

چکیده

This paper shows the scattering mechanism at diluted magnetic
semiconductors. The doped magnetic atom produces a scattering potential due to be
coupled of itinerant carrier spin of host material with magnetic momentum of the doped
magnetic atom. Formulas of scattering event were rewritten by the plane wave
expansion and then the electron mobility of DMS was calculated. Calculations show
Kondo effect on diluted magnetic semiconductors at nonmagnetic phase. Here has been
supposed that the doping concentration is low and so the coupling coefficient between
magnetic atoms is weak enough that DMS does not change its magnetic phase. In other
words, material is on paramagnetic phase. For proofing our model, we have grown
Zn0.99Mn0.01O with Sol-Gel route. Pure ZnO has also grown with this method for a
comparison. Experimental results proved our theoretical model. Therefore as a result, at
diluted magnetic semiconductors similar to diluted magnetic metals in nonmagnetic
phase can observe kondod's effect .

کلیدواژه‌ها

diluted magnetic semiconductor؛ Kondo effect؛ scattering event؛ relation time؛ electrical resistivity

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