A Computational Study on the Performance of Graphene Nanoribbon Field Effect Transistor

Journal of Optoelectronical Nanostructures

مقاله 1، دوره 2، شماره 3 - شماره پیاپی 6، مهر و آبان 2017، صفحه 1-12   

نوع مقاله: Articles

نویسندگان

Maedeh Akbari Eshkalak^{* 1}؛ Rahim Faez²

¹Young Researchers and Elite Club, Lahijan Branch, Islamic Azad University, Lahijan, Iran

²Department of Electrical Engineering, Sharif University of Technology, Tehran, Iran

تاریخ دریافت: 02 اسفند 1393،  تاریخ بازنگری: 02 مهر 1396،  تاریخ پذیرش: 19 مرداد 1396 

چکیده

Despite the simplicity of the hexagonal graphene structure formed by carbon atoms, the electronic behavior shows fascinating properties, giving high expectation for the possible applications of graphene in the field. The Graphene Nano-Ribbon Field Effect Transistor (GNRFET) is an emerging technology that received much attention in recent years. In this paper, we investigate the device performance of Graphene Nanoribbon Field Effect Transistor (GNRFET) as a function of contact doping concentration and the gate insulator dielectric constant. The simulations are based on the Non-Equilibrium Green’s function (NEGF) method coupled with a two dimensional Poisson equation in the ballistic regime. We assume a tight-binding Hamiltonian in mode space representation. By applying proper symmetric source and drain doping concentrations, It is observed that the GNRFET with low doping concentration has higher transconductance, lower Subthreshold Swing, lower Off-current (I_off), and higher ratioof On-current to Off-current (I_on/I_off). Moreover, The GNRFET with high doping concentration has smaller quantum capacitance, higher intrinsic cut-off frequency, and lower gate capacitance in comparison with low doping GNRFET. As we know, Selection of a suitable gate dielectric constant is important in determining device performance. The results indicate that the GNRFET with high dielectric constant has higher transconductance, lower Off-current, higher On-current and higher ratio of I_on/I_off in comparison with low dielectric GNRFET. Furthermore, the GNRFET with low dielectric constant has smaller capacitances in gate, drain and source. The GNRFET with high dielectric constant has lower Sub-threshold Swing.

کلیدواژه‌ها

Graphene Nanoribbon FET؛ Non Equilibrium Green’s function (NEGF)؛ Doping concentration؛ Gate Insulator

مراجع

[1]      A. Tejeda and P. G. Soukiassian, Graphene: from functionalization to devices, IOP Science, vol. 47, 2014.

[2]      N. Ghobadi and M. Pourfath, A Comparative Study of Tunneling FETs Based on Graphene and GNR Heterostructures, IEEE Trans, 61 (2014) 186-192.

[3]      A. Chanana, A. Sengupta, and S. Mahapatra, Performance analysis of boron nitride embedded armchair graphene nanoribbon metal–oxide semiconductor field effect transistor with Stone Wales defects, Journal of Applied Physics, 115 (2014) 034501.

[4]      M. Sanaeepur, A. Yazdanpanah, and M. J. Sharifi, Performance Analysis of Graphene Nanoribbon Field Effect Transistors in the Presence of Surface Roughness, Electron Devices, IEEE Transactions on , 61 (2014) 1193 - 1198.

[5]      G. S. Kliros, Modeling of Carrier Density and Quantum Capacitance in Graphene Nanoribbon FETs, International Conference on Microelectronics (ICM), 2010.

[6]      Y. Chen, A. Sangai, M. Gholipour, and D. Chen, Graphene Nano-Ribbon Field-Effect Transistors as Future Low-Power Devices, IEEE International Symposium on Low Power Electronics and Design (ISLPED), 2013.

[7]      H. Da, K.T. Lama, G. S. Samudra, G. Liang, S. K. Chin, Influence of contact doping on graphene nanoribbon heterojunction tunnelling field effect transistors, Solid-State Electronics, 77 (2012) 51-55.

[8]      W. We, L. Na, R. Yuzhou, L. Hao, Z. Lifen, L. Jin, J. Junjie, C. Xiaoping, W. Kai, and X. Chunping, A computational study of the effects of linear doping profile on the high-frequency and switching performances of hetero-material-gate CNTFETs, Journal of Semiconductors, 34 (2013) 124002.

[9]      R. Yousefi, M. Shabani, M. Arjmandi, S.S. Ghoreishi, A computational study on electrical characteristics of a novel band-to-band tunnelling graphene nanoribbon FET, Superlattices and Microstructures, 60 (2013) 169-178.

[10]  H. Sarvari, R. Ghayour, and E. Dastjerdy, Frequency analysis of graphene nanoribbon FET by Non-Equilibrium Green’s Function in mode space, Physica E, 43 (2011) 1509–1513.

[11]  R. Grassi, A. Gnudi, E. Gnani, S. Reggiani, and G. Baccarani, Mode Space Approach for Tight Binding Transport Simulation in Graphene Nanoribbon FETs, IEEE Trans., 10 (2011) 371-378.

[12]  Y. Ouyang, Y. Yoon, and J. Guo, Scaling behaviors of graphene nanoribbon FETs: A three-dimensional quantum simulation study, IEEE Trans. Electron Devices, 54 (9) (2007) 2223–2231.

[13]  H. Mohammadpour, A. Asgari, Numerical study of quantum transport in the double-gate graphene nanoribbon field effect transistors, ScienceDirect, 43 (9) (2011) 1708–1711.

[14]  Z. Arefinia, A. Orouji, Investigation of the novel attributes of a carbon nanotube FET with high-k gate dielectrics, physica E, 40 (2008) 3068-71.

[15]  G. S. Kliros, Analytical modeling of uniaxial strain effects on the performance of double-gate graphene nanoribbon field-effect transistors, Springer, 9 (1) (2014).