Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature

Journal of Optoelectronical Nanostructures

مقاله 5، دوره 3، شماره 1 - شماره پیاپی 8، فروردین 2018، صفحه 51-64   

نوع مقاله: Articles

نویسندگان

Mahdi Gholampour^{* 1}؛ Amir Abdollah-zadeh²؛ Leila Shekari³؛ Reza Poursalehi²؛ mahdi soltanzadeh²

¹1.Physics Group, Faculty of Basic Sciences, Imam Ali University, Tehran, Iran 2.Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran

²Nanomaterials Group, Department of Materials Engineering, Tarbiat Modares University, P.O. Box 14115-143, Tehran, Iran

³Barman International Technology Development Company

تاریخ دریافت: 22 آبان 1396،  تاریخ بازنگری: 24 دی 1396،  تاریخ پذیرش: 10 اردیبهشت 1397 

چکیده

Gallium nitride (GaN) nanostructures (NS) were synthesized using pulsed
direct current plasma enhanced chemical vapor deposition (PDC-PECVD) on quartz
substrate at low temperature (600°C). Gallium metal (Ga) and nitrogen (N) plasma were
used as precursors. The morphology and structure of the grown GaN NS were
characterized by field emission scanning electron microscope (FE-SEM), transmission
electron microscopy (TEM) and X-ray diffraction (XRD). The XRD pattern shows that
GaN NS were grown in the hexagonal wurtzite-type crystal structure. The optical
properties of the grown GaN NS were examined by photoluminescence (PL), UVvisible
and Raman spectroscopy. The PL spectroscopy measurements of the grown GaN
NS showed blue shifts as compared to the GaN bulk structure. The Raman spectra
displayed three Raman active optical phonons at 534 cm-1, 570 cm-1 and 730 cm-1 due to
A1 (TO), E2 (high) and A1 (LO), respectively.

کلیدواژه‌ها

Chemical Vapor Deposition؛ GaN؛ Green Method؛ Nanostructures؛ Optical Properties

مراجع

[1] Pankove JI. Luminescence in GaN. J Lumin. (1973) .
[2] Pankove JI. Luminescent properties of GaN. Solid State Commun. (1970) .
[3] Kaun SW. Molecular beam epitaxy for high-performance Ga-face GaN electron devices. Semicond Sci Technol. 28 (7) (July 2013) 074001.
[4] Shibata H. High Thermal Conductivity of Gallium Nitride (GaN) Crystals Grown by HVPE Process. Mater Trans. 48 (10) (2007) 2782–2786.
[5] Pengelly RS. A review of GaN on SiC high electron-mobility power transistors and MMICs. IEEE Trans Microw Theory Tech. 60 (6) (2012) 1764–1783.
[6] Du Y. Electronic structure and optical properties of zinc-blende GaN. Optik (Stuttg). 123 (December 2012) 2208–2212.
[7] Kente T. Gallium nitride nanostructures: Synthesis, characterization and applications. J Cryst Growth. 444 (2016) 55–72.
[8] Saron KM a. Self-catalyst growth of novel GaN nanowire flowers on Si (111) using thermal evaporation technique. Mater Chem Phys. 139 (2)–(3) (May 2013) 459–464.
[9] Saron KMA. NH3-Free growth of GaN nanostructure on n-Si (111) substrate using a conventional thermal evaporation technique. J Cryst Growth. 349 (June 2012) 19–23.
[10] Yasuhiko A. Progress in GaN-based nanostructures for blue light emitting quantum dot lasers and vertical cavity surface emitting lasers. IEICE Trans Electron. E83 (2000) 564–572.
[11] Kang MS. Gallium nitride nanostructures for light-emitting diode applications. Nano Energy. 1 (3) (May 2012) 391–400.
[12] Gopalakrishnan M. Structural and optical properties of GaN and InGaN nanoparticles by chemical co-precipitation method. Mater Res Bull. 47 (11) (2012) 3323–3329.
[13] Gholampour M. Synthesis of Serrated GaN Nanowires for Hydrogen Gas Sensors
62 * Journal of Optoelectronical Nanostructures Winter 2017 / Vol. 2, No. 4
Applications by Plasma-Assisted Vapor Phase Deposition Method. J Nanostructures. 7 (3) (2017) 200–204.
[14] Schuster F. Self-assembled GaN nanowires on diamond. Nano Lett. 12 (May 2012) 2199–2204.
[15] Im MK. Metalorganic Molecular Beam Epitaxy of GaN Thin Films on a Sapphire Substrate. Jpn J Appl Phys. 39 (2000) 6170–6173.
[16] Grant VA. Optimization of RF plasma sources for the MBE growth of nitride and dilute nitride semiconductor material. Semicond Sci Technol. 22 (2) (2007) 15.
[17] Jeong JK. Improvement in the Crystalline Quality of Epitaxial GaN Films Grown by MOCVD by Adopting Porous 4H-SiC Substrate. Electrochem Solid-State Lett. 7 (2004) C43–C45.
[18] Shekari L. High-quality GaN nanowires grown on Si and porous silicon by thermal evaporation. Appl Surf Sci. 263 (2012) 50–53.
[19] Zhu CF. Influence of double buffer layers on properties of Ga-polarity GaN films grown by rf-plasma assisted molecular-beam epitaxy. Mater Lett. 57 (2003) 2413–2416.
[20] Mata R. Nucleation of GaN nanowires grown by plasma-assisted molecular beam epitaxy: The effect of temperature. J Cryst Growth. 334 (1) (2011) 177–180.
[21] Hou W. Synthesis of GaN Core-shell Nanowires by Plasma-Enhanced Chemical Vapor Deposition. Chem Eng. (2010) 8–9.
[22] Hou WC. Nucleation control for the growth of vertically aligned GaN nanowires. Nanoscale Res Lett. 7 (January 2012) 1–6.
[23] Nagata T. Hydrogen Effect on Near-Atmospheric Nitrogen Plasma Assisted Chemical vapor Deposition of GaN Film Growth. J Appl Phys. 105 (2009) 536–541.
[24] Sani R a. Growth of GaN " lm on a-plane sapphire substrates by plasma-assisted MOCVD. 221 (2000) 311–315.
[25] Qiaoqin Y. Plasma-enhanced Deposition of Nano-Structured Carbon Films. Plasma Sci Technol. 7 (February 2005) 2660–2664.
[26] Gholampour M. Synthesis of GaN Nanoparticles by DC Plasma Enhanced Chemical Vapor Deposition. 829 (2014) 897–901.
[27] Cai XM. CVD growth of InGaN nanowires. J Alloys Compd. 467 (1) (2009) 472–476.
[28] Ng DKT. Selective growth of gallium nitride nanowires by femtosecond laser patterning. J Alloys Compd. 449 (1)–(2) (January 2008) 250–252.
[29] Huang E. A simple synthesis of Ga 2 O 3 and GaN nanocrystals. RSC Adv. 7 (76) (2017) 47898–47903.
[30] Rabiee Golgir H. Fast Growth of GaN Epilayers via Laser-Assisted Metal–Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications. ACS Appl Mater Interfaces. 9 (25) (2017) 21539–21547.
[31] Liu K-W. Growth of gallium nitride on silicon by molecular beam epitaxy incorporating a chromium nitride interlayer. J Alloys Compd. 511 (1) (January 2012) 1–4.
[32] Cui J. Morphology and growth mechanism of gallium nitride nanotowers synthesized by metal–organic chemical vapor deposition. J Alloys Compd. 563 (June 2013) 72–76.
[33] Shekari L. Fabrication of GaN nanowires on porous GaN substrate by thermal evaporation. Mater Sci Semicond Process. 16 (2) (2013) 485–488.
[34] Beh KP. The growth of III–V nitrides heterostructure on Si substrate by plasma-assisted molecular beam epitaxy. J Alloys Compd. 506 (1) (September 2010) 343–346.
[35] Butcher KSA. Optical and structural analysis of GaN grown by remote plasma enhanced laser induced chemical vapour deposition. phys stat sol. 503 (1) (2002) 499–503.
[36] Saron KMA. Enhanced ultraviolet emission in photoluminescence of GaN film covered by ZnO nanoflakes. J Lumin. 134 (2013) 266–271.
[37] Qaeed M a. Cubic and hexagonal GaN nanoparticles synthesized at low temperature. Superlattices Microstruct. 64 (December 2013) 70–77.
[38] Nagata T. GaN film fabrication by near-atmospheric plasma-assisted chemical vapor deposition. Jpn J Appl Phys. 46 (No. 2) (2007) 43–45.
[39] Timoshkin AY. DFT modeling of chemical vapor deposition of GaN from organogallium precursors. 2. structures of the oligomers and thermodynamics of the association processes. J Phys Chem A. 105 (2001) 3249–3258.
[40] Chang Y-K. Synthesis and characterization of indium nitride nanowires by plasma-assisted chemical vapor deposition. Mater Lett. 63 (August 2009) 1855–1858.
[41] Gholampour M. A catalyst free method to grow GaN nanowires on porous Si at low temperature. Ceram Int. 41 (10) (2015) 13855–13860.
[42] Torii K. Reflectance and emission spectra of excitonic polaritons in GaN. Phys Rev B. 60 (7) (August 1999) 4723–4730.
[43] Wei X. Synthesis and characterization of GaN nanowires by a catalyst assisted chemical vapor deposition. Appl Surf Sci. 257 (September 2011) 9931–9934.
[44] Yoon J-W. Quantum confinement effect of nanocrystalline GaN films prepared by pulsed-laser ablation under various Ar pressures. Thin Solid Films. 471 (1) (2005) 273–276.
[45] Matoussi A. Luminescent properties of GaN films grown on porous silicon
substrate. J Lumin. 130 (3) (March 2010) 399–403.
[46] Oh TS. Spatial stress distribution and optical properties of GaN films grown on convex shape-patterned sapphire substrate by metalorganic chemical vapor deposition. J Alloys Compd. 509 (6) (February 2011) 2952–2956.
[47] Shekari L. Structural characterizations of GaN nanowires grown on Si (111) substrates by thermal evaporation. Mater Lett. 114 (January 2014) 140–143.
[48] Chin AH. Photoluminescence of GaN nanowires of different crystallographic orientations. Nano Lett. 7 (2007) 626–631.
[49] Harima H. Properties of GaN and related compounds studied by means of Raman scattering. J Phys Condens Matter. 14 (2002) 967–993.
[50] Dračínský M. Ab initio modeling of fused silica, crystal quartz, and water Raman spectra. Chem Phys Lett. 512 (1)–(3) (August 2011) 54–59.
[51] Hnnoerson S. silicate Raman spectra of gallium and germanium substituted vaiiations in intermediate range order Uniuersitry. Am Mineral. 70 (1985) 946–960.
[52] Livneh T. Polarized Raman scattering from single GaN nanowires. Physcal Rev B. 74 (2006) 035320.
[53] Sekine T. Surface Phonons Studied by Raman Scattering in GaN Nanostructures. J Phys Soc Japan. 86 (7) (2017) 74602.
[54] Munawar Basha S. Effect of growth temperature on gallium nitride nanostructures using HVPE technique. Phys E Low-Dimensional Syst Nanostructures. 44 (9) (2012) 1885–1888.
[55] Yadav BS. Highly oriented GaN films grown on ZnO buffer layer over quartz substrates by reactive sputtering of GaAs target. Thin Solid Films. 517 (2) (November 2008) 488–493.
[56] Nyk M. Synthesis, structure and optical properties of GaN nanocrystallites. Mater Sci Semicond Process. 8 (4) (August 2005) 511–514.
[57] Chen R. Top-gate thin-film transistors based on GaN channel layer. Appl Phys Lett. 100 (2) (2012) 022111.
[58] Souri D. Band gap determination by absorption spectrum fitting method (ASF) and structural properties of different compositions. J Non Cryst Solids. 355 (31)–(33) (2009) 1597–1601.