Effects of the Channel Length on the Nanoscale Field Effect Diode Performance

Journal of Optoelectronical Nanostructures

مقاله 3، دوره 3، شماره 2 - شماره پیاپی 9، مرداد 2018، صفحه 29-40   

نوع مقاله: Articles

نویسندگان

arash rezaei^* ؛ Bahram Azizollah-Ganji؛ Morteza Gholipour

Department of Electrical & Computer Engineering, Babol Noshirvani University of Technology, Babol, Iran.

تاریخ دریافت: 14 آذر 1396،  تاریخ بازنگری: 02 اردیبهشت 1397،  تاریخ پذیرش: 27 خرداد 1397 

چکیده

Field Effect Diode (FED)s are interesting device in providing the higher
ON-state current and lower OFF–state current in comparison with SOI-MOSFET
structures with similar dimensions. The impact of channel length and band-to-band
tunneling (BTBT) on the OFF-state current of the side contacted FED (S-FED) has been
investigated in this paper. To find the lowest effective channel length, this device is
simulated with 75, 55 and 35 nm channel length and the results obtained are presented
in this article. Our numerical results show that the ION/IOFF ratio can be varied from 104
to 100 for S-FED as the channel lengths decrease. We demonstrate that for channel
lengths shorter than 35 nm by considering the Band-to-Band tunneling model, the SFED
device does not turn off.

کلیدواژه‌ها

Field Effect Diode (FED)؛ Side Contacted FED (S-FED)؛ Band-To- Band-Tunneling (BTBT)؛ ION/IOFF Ratio

مراجع

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