Analytical Investigation of Frequency Behavior in Tunnel Injection Quantum Dot VCSEL

Journal of Optoelectronical Nanostructures

مقاله 6، دوره 3، شماره 2 - شماره پیاپی 9، مرداد 2018، صفحه 65-86   

نوع مقاله: Articles

نویسندگان

Mehdi Riahinasab^{* 1}؛ Elham Darabi²

¹Department of Electrical Engineering, Science and Research Branch, Islamic Azad University, Tehran, Iran

²Plasma physics research center, Science and Research Branch, Islamic Azad University, Tehran, Iran.

تاریخ دریافت: 30 اردیبهشت 1397،  تاریخ بازنگری: 18 خرداد 1397،  تاریخ پذیرش: 19 تیر 1397 

چکیده

The frequency behavior of the tunnel injection quantum dot vertical cavity
surface emitting laser (TIQD-VCSEL) is investigated by using an analyticalnumerical
method on the modulation transfer function. The function is based on the
rate equations and is decomposed into components related to different energy levels
inside the quantum dot and injection well. In this way, the effect of the tunneling
process on the improvement of the laser frequency response is determined. Generally,
the components of the modulation transfer function in the wetting layer and the excited
state limit the total laser bandwidth. Of course, the component associated with the
tunneling process increases overall system bandwidth. It is shown that for currents
above threshold, the carrier density at the excited state in TIQD has a slight slope,
unlike the conventional quantum dot (CQD). It will improve the frequency response of
the tunnel injection structure. It can be attributed to the difference in Pauli blocking
factor values at the excited state and the ground state in the two structures.

کلیدواژه‌ها

Modulation Transfer Function؛ Tunnel Injection Quantum Dot (TIQD)؛ Vertical Cavity Surface Emitting Laser (VCSEL)

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