Self-heating effect modeling of a carbon nanotube-based fieldeffect transistor (CNTFET)

Journal of Optoelectronical Nanostructures

مقاله 4، دوره 4، شماره 1 - شماره پیاپی 12، فروردین 2019، صفحه 51-66   

نوع مقاله: Articles

نویسندگان

Kazem Pourchitsaz؛ Mohammad Reza Shayesteh^*

Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran

تاریخ دریافت: 06 مهر 1397،  تاریخ بازنگری: 28 دی 1397،  تاریخ پذیرش: 11 فروردین 1398 

چکیده

We present the design and simulation of a single-walled carbon nanotube
(SWCNT)-based field-effect transistor (FET) using Silvaco TCAD. In this paper, the
self-heating effect modeling of the CNT MOSFET structure is performed and compared
with conventional MOSFET structure having same channel length. The numerical
results are presented to show the self-heating effect on the I–V characteristics of the
CNT MOSFET and conventional MOSFET structures. Results from numerical
simulation show that the maximum temperature rise and the performance degradation of
the CNT MOSFET are quite lower than that of the conventional MOSFET counterpart.
These advantages are contributed by the good electrical and thermal properties of the
SWCNTs. Therefore, SWCNT materials have a high capability for the development of
active devices with low power dissipation and good reliability at high operating
temperature.

کلیدواژه‌ها

Field Effect Transistor (FET)؛ Single-Walled Carbon Nanotube (SWCNT)؛ Self-Heating Effect؛ Transistor Characteristic؛ Threshold Voltage

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