Effect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL)

Journal of Optoelectronical Nanostructures

مقاله 2، دوره 5، شماره 1 - شماره پیاپی 17، اردیبهشت 2020، صفحه 19-34   

نوع مقاله: Articles

نویسندگان

Abbas Ghadimi^{* 1}؛ Mohamad Ahmadzadeh²

¹Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran

²Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran

تاریخ دریافت: 11 آبان 1398،  تاریخ بازنگری: 18 دی 1398،  تاریخ پذیرش: 03 اردیبهشت 1399 

چکیده

Abstract: In this study, the effects of variation of thickness and the number of quantum
wells as well as the contact length were investigated. In this paper, a vertical cavity surface
emitting laser was simulated using of software based on finite element method. The
number of quantum wells was changed from 3 to 9 and the results which are related to
output power, resonance wavelength and threshold current were extracted. Output
specifications in terms of quantum wells thicknesses of 3.5nm to 9.5nm were evaluated.
Contact thickness is also changed from 0.5μm to 3μm. Results showed that as the number
of quantum wells increased, the resonance wavelength also increased and photon energy
decreased. By reducing the thickness of the quantum well, the threshold current and
radiation wavelength were also decreased. By increasing the contact length, threshold
current and output power increased. Temperature inside the network and density of
photon were increased as the contact length increased

کلیدواژه‌ها

Quantum well؛ Contact Length؛ Threshold Current؛ Output Power؛ Vertical Cavity Surface Emitting Laser (VCSEL)

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