Improvement of the Drive Current in 5nm Bulk-FinFET Using Process and Device Simulations

Journal of Optoelectronical Nanostructures

مقاله 5، دوره 5، شماره 1 - شماره پیاپی 17، اردیبهشت 2020، صفحه 65-82   

نوع مقاله: Articles

نویسندگان

Payman Bahrami¹؛ Mohammad Reza Shayesteh^{* 1}؛ Majid Pourahmadi¹؛ Hadi Safdarkhani²

¹Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran

²Department of Electrical Engineering, Yazd University, Yazd, Iran

تاریخ دریافت: 17 مرداد 1397،  تاریخ بازنگری: 20 دی 1398،  تاریخ پذیرش: 03 اردیبهشت 1399 

چکیده

Abstract: We present the optimization of the manufacturing process of the 5nm bulk-
FinFET technology by using the 3D process and device simulations. In this paper, by
simulating the manufacturing processes, we focus on optimizing the manufacturing
process to improve the drive current of the 5nm FinFET. The improvement of drive
current is one of the most important issues in the FinFETs design. We first investigate
the impact of manufacturing process parameters include gate oxide thickness, type of
the gate oxide, height of fin, and doping of the source and drain region on threshold
voltage, breakdown voltage, and drive current of the transistor. Then, by selecting the
optimal parameters of the manufacturing process, we improve the drive current of the
5nm bulk-FinFET.

کلیدواژه‌ها

FinFET؛ Manufacturing Process؛ Drive Current؛ Threshold Voltage؛ DIBL Effect

مراجع

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