Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar Transistor Laser

Journal of Optoelectronical Nanostructures

مقاله 3، دوره 5، شماره 2 - شماره پیاپی 18، مرداد 2020، صفحه 25-38   

نوع مقاله: Articles

نویسندگان

ashkan horri^* ؛ Seyedeh Zahra Mirmoeini

Department of Electrical Engineering, Arak Branch, Islamic Azad University Arak, Iran

تاریخ دریافت: 21 خرداد 1398،  تاریخ بازنگری: 02 تیر 1399،  تاریخ پذیرش: 14 تیر 1399 

چکیده

In this paper, we present an analytical model to analysis the kirk effect on
static and dynamic responses of quantum well heterojunction bipolar transistor lasers
(HBTLs). Our analysis is based on solving the kirk current equation, continuity
equation and rate equations of HBTL. We compare the performance (current gain,
output photon number and small signal modulation bandwidth) of the transistor laser
with different levels of the kirk current. We show that, at high collector currents, the
static and small signal behavior of HBTL depend on kirk current level. The results
indicate that, the level of kirk current affect current gain, output photon number and
modulation bandwidth From simulation results, it can befound that, kirk effect has
destructive influence on HBTL performance. It was found that lower modulation
bandwidth and lower current gain occurs at lower kirk current level. For increasing kirk
current, the high collector-base voltage and high collector length was proposed.

کلیدواژه‌ها

Quantum well؛ Heterojunction Bipolar Transistor lasers (HBTLs)؛ Kirk Effect؛ Saturation Velocity

مراجع

W. Liu, Fundamentals of III-V Devices, HBTs, MESFETs, and HFETs/HEMTs John Wiley & Sons. New York, 1999.
[2] B. Faraji B, W. Shi, D L. Pulfrey, and L. Chrostowski. Analytical modeling of the transistor laser, IEEE J. Sel. Topics Quantum Electron. 15(3) (1992, Aug.) 594-603. Available: https://ieeexplore.ieee.org/document/4839011
[3] A. Horri , S.Z. Mirmoeini, and R. Faez. Analysis of carrier dynamic effects in transistor laser, Optical Engineering. 51(2) (2012.) 024202. Available: https://spie.org/Publications/Journal/10.1117/1.OE.51.2.024202?SSO=1
[4] A. Horri , and R. Faez. Large signal analysis of double quantum well transistor laser, Optical and Quantum Electronics. 45(5) (2013.) 389-399. Available: https://link.springer.com/article/10.1007/s11082-012-9641-5
[5] M.S. Shirokov , S.V. Cherepko , D. Xiaohang , J.C.M Hwang , and D.A. Teeter. Large-signal modeling and characterization of high-current effects in InGaP/GaAs HBTs,. IEEE Trans. Microwave Theory and Techniques 50(4) (2002.) 1084-1094. Available: https://ieeexplore.ieee.org/document/993410
[6] N.G Tao and C.R Bolognesi, Kirk effect mechanism in type-II InP/GaAsSb double heterojunction bipolar transistor,. Journal of applied physics 102(6) (2007.) 064511. Available: https://aip.scitation.org/doi/10.1063/1.2783764
[7] D. Elias and D. Ritter, Kirk effect in bipolar transistors with a nonuniform dopant profile in the collector,. IEEE Electron Device Letters, 27(1) (2006.) 25-27. Available: https://ieeexplore.ieee.org/document/1561444
[8] H.K. Gummel, A self consistent iterative scheme for one-dimension steady state transistor calculation,. IEEE Transactions on Electron Devices, 11(10) (1964.) 455-465. Available: https://ieeexplore.ieee.org/document/1473752
[9] M. Feng, R. Bambery, and Jr Holonyak, Bandfilling and photon-assisted tunneling in a quantum-well transistor laser,. Applied Physics Letters, 98(12) (2011.) 123505.
Available: https://aip.scitation.org/doi/10.1063/1.3569949
[10] A. Horri, S.Z. Mirmoeini, and R Faez, The noise equivalent circuit model of quantum dot laers,. Journal of Russian Laser Research, 33(3) (2012.) 217-226. Available: https://link.springer.com/article/10.1007/s10946-012-9275-x
Analysis of Kirk Effect in Nanoscale Quantum Well Heterojunction Bipolar … * 37
[11] T. Kaneko, T. Yoshida, S. Tadano, N. Nishiyama, and S. Arai, Improvement in the current-gain of a 1.3 μm npn-AlGaInAs/InP transistor laser using a thin p-GaInAsP base layer ,. Japanese Journal of Applied physics, 55(3) (2012.) 217-226. Available: https://link.springer.com/article/10.1007/s10946-012-9275-x
[12] A. Horri, S.z. Mirmoeini, R. Faez, Large Signal Circuit Model of Two-Section Gain Lever Quantum Dot Laser,. Chinese Physics Letters, 29(11) (2012.) 114207. Available: https://iopscience.iop.org/article/10.1088/0256-307X/29/11/114207
[13] I. Taghavi, B. Namvar, M. Hosseini, and H. Kaatuzian, Large signal analysis of multiple quantum well transistor laser: Investigation of inbalanced carrier and photon density distribution ,. Journal of Applied physics, 127(13) (2020.) 133102. Available: https://link.springer.com/article/10.1007/s10946-012-9275-x
[14] Y. Li, and J.P Leburton, Base transport factor and frequency response of transistor lasers, Journal of Applied physics, 126(15) (2019.) 153103. Available: https://aip.scitation.org/doi/abs/10.1063/1.5099041?journalCode=jap
[15] J. Wun, R. Chao, Y. Wang, Y.Chen, and J. Shi, Type-II GaAs 0.5Sb0.5/Inp Uni-traveling carrier photodiodes with sub-terahertz bandwidth and high power performance under zero bias operation , Journal of Lightwave Technology, 35(4) (2017.)711-716,Available: https://ieeexplore.ieee.org/abstract/document/7562455
[16] R. Swoboda, K. S. Hormstein, H. Wile, G. Langguth, and H. Zimmermann, Bicmos-integrated photodiode exploiting drift enhancement, Optical Enginnering, 53(8),(2014.),087103,Available:https://spie.org/publications/journal/10.1117/1.OE.53.8.087103
[17] A. Ghadimi, and M. Ahmadzadeh, Effect of variation of specification o quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL), JOURNAL of OPTOELECTRONICAL NANO STRUCTURES,5(1),(2020.),19-34,Available: http://jopn.miau.ac.ir/article_4031.html
[18] M. Riahinasab, and E. Darabi, Analytical Investigation of Frequency Behavior in Tunnel Injection Quantum Dot VCSEL , JOURNAL of
38 * Journal of Optoelectronical Nanostructures Spring 2020 / Vol. 5, No. 2
OPTOELECTRONICAL NANOSTRUCTURES, 3(2), (2020.), 65-86, Available: http://jopn.miau.ac.ir/article_4031.html