Switching Performance of Nanotube Core-Shell Heterojunction Electrically Doped Junctionless Tunnel Field Effect Transistor

Journal of Optoelectronical Nanostructures

مقاله 1، دوره 5، شماره 2 - شماره پیاپی 18، مرداد 2020، صفحه 1-12   

نوع مقاله: Articles

نویسنده

Zahra Ahangari^*

Department of Electronic, Faculty of Electrical Engineering, Yadegar- e- Imam Khomeini (RAH) Shahr-e-Rey Branch, Islamic Azad University, Tehran, Iran.

تاریخ دریافت: 12 فروردین 1399،  تاریخ بازنگری: 18 اردیبهشت 1399،  تاریخ پذیرش: 14 تیر 1399 

چکیده

Abstract: In this paper, a novel tunnel field effect transistor (TFET) is introduced, that
due to its superior gate controllability, can be considered as a promising candidate for
the conventional TFET. The proposed electrically doped heterojunction TFET
(EDHJTFET) has a 3D core-shell nanotube structure with external and internal gates
surrounding the channel that employs electrostatically doping rather than ionimplantation
for creating the tunneling junction. The staggered type InAs/GaAs0.1Sb0.9
heterojunction devices, considerably amplifies the band to band tunneling rate. The
effect of device geometry and physical design parameters on the performance of the
device are comprehensively investigated and cut off frequency of 200GHz, on/off
current ratio of 9.41×108 and subthreshold swing of 8.7 mV/dec are achieved. The
sensitivity analysis reveals that core/shell control gate workfunction and doping density
are critical design parameters that may affect the device performance. Moreover, the
insensitivity of off-state current to the drain voltage variation and channel length scaling
signifies the application of this device in nanoscale regime.

کلیدواژه‌ها

Junctionless transistor؛ Tunnel field effect transistor؛ Band to band tunneling؛ Subthreshold swing؛ Gate workfunction

مراجع

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