Observation of Raman Gain in Reduced Length of Bismuth Erbium Doped Fiber

Journal of Optoelectronical Nanostructures

مقاله 5، دوره 5، شماره 3 - شماره پیاپی 19، آبان 2020، صفحه 71-80   

نوع مقاله: Articles

نویسندگان

شریفه شاهی^{* 1}؛ PARVANE MOMAYEZAN MARNANI¹؛ mohsen ranjbaran¹؛ sulaiman wadi harun²

¹Laser and Biophotonics in Biotechnologies Research Center, Isfahan (Khorasgan) Branch, Islamic Azad University, Isfahan, Iran

²Department of Electrical Engineering, Faculty of Engineering, University of Malaya, 50630 Kuala lumpur, Malaysia

تاریخ دریافت: 29 دی 1398،  تاریخ بازنگری: 13 تیر 1399،  تاریخ پذیرش: 14 مرداد 1399 

چکیده

Raman amplification of a 49 cm Bismuth oxide (Bi2O3) as a nonlinear gain
medium based erbium doped fiber amplifier (EDFA) is reported in new and compact
design in near infrared spectral regions. The bismuth glass host provides the
opportunity to be doped heavily with erbium ions to allow a compact optical gain fiber
amplifier design by using reduced fiber length and the 1480 nm low pump power
around 150 mW. A extended Raman amplification bandwidth of 45 nm, from 1520-
1565 nm (C-band window) wavelengths is empirically proposed in a backward and
dualwavelength pumped Bi-EDF by employing 350 mW Raman pump in 1440 nm.
Because of the short length gain medium as a nonlinear Bi-EDF, amplification of 3 dB
is achieved over a C-band wavelength range. This simple C-band Raman amplifier
based Brillouin and ASE backscattering was constructed to test the forward, backward
and dual-wavelength pump laser and on-off gain. A peak gain of 1.53 dB was obtained
with a 3-dB bandwidth of 45 nm that the varieties of gain is 2.02 dB around 1545 nm in
backward pumping design. It array will be employ for sensing, spectroscopy and
telecommunication systems.

کلیدواژه‌ها

Bi-EDF؛ Compact gain medium؛ C-band؛ Dual wavelength source؛ Raman gain

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