Time Response of a Resonant Tunneling Diode Based Photo- Detector (RTD-PD)

Journal of Optoelectronical Nanostructures

مقاله 3، دوره 6، شماره 1 - شماره پیاپی 21، فروردین 2021، صفحه 35-58   

نوع مقاله: Articles

شناسه دیجیتال (DOI): 10.30495/jopn.2021.4540

نویسندگان

Mohamad Ahmadzadeh¹؛ Abbas Ghadimi^{* 2}؛ Seyed Ali Sedigh Ziabari³

¹Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran

²Department of Electrical Engineering, Lahijan Branch, Islamic Azad University, Lahijan, Iran

³Department of Electrical Engineering, Rasht Branch, Islamic Azad University, Rasht, Iran

تاریخ دریافت: 09 شهریور 1399،  تاریخ بازنگری: 29 آبان 1399،  تاریخ پذیرش: 01 آذر 1399 

چکیده

در این مقاله ، یک دیود تونل زنی تشدید با
ساختار سد مضاعف AlAs / GaAs با استفاده از عملکرد سبز غیر تعادلی شبیه سازی شده است. یک
لایه جذب InGaAs منطبق شده برای تشخیص نور در طول موج λ = 600
نانومتر به دستگاه اضافه می شود . میدان الکتریکی از طریق دستگاه و مشخصات نمودار باند انرژی ارائه شده است.
جریان عکس دستگاه و منحنی های جریان جریان منبع در مقابل شدت نور
مقایسه می شوند . در دمای اتاق ، بازده کوانتومی 95/0 برای
دستگاه بدست آمد . پاسخ زمان گذرا دستگاه به دست آمد و وابستگی آن به
پارامترهای ساختاری (ضخامت لایه جذب ، ضخامت کلکتور و انتشار دهنده و
دوپینگ مخاطبین) ، شدت نور ، زاویه نور ساطع شده و سوگیری ولتاژ
شبیه سازی شده و تأثیر آنها بر عملکرد دستگاه مورد تجزیه و تحلیل قرار گرفت. پهنای باند
دستگاه به دست آمد. نتایج شبیه سازی نشان می دهد که وقتی بایاس ولتاژ افزایش یابد ،
زمان افتادن کاهش می یابد و پاسخ دستگاه سریعتر است. با تغییر ضخامت
لایه جذب و مخاطب ، پاسخ زمان RTD-PD تغییر می کند. تغییرات
دوپینگ در لایه های تماس بر روی پهنای باند تأثیر می گذارد. نتیجه نشان می دهد که تغییرات
شدت نور و زاویه نور ساطع شده ، پاسخ زمان گذرا را تغییر می دهند.

کلیدواژه‌ها

Quantum Well؛ Absorption Layer؛ Time Response؛ Non-Equilibrium Green’s Function (NEGF)

مراجع

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