Enhancement of deep violet InGaN double quantum wells laser diodes performance characteristics using superlattice last quantum barrier

Journal of Optoelectronical Nanostructures

دوره 6، شماره 2 - شماره پیاپی 22، مرداد 2021، صفحه 107-120   

نوع مقاله: Articles

شناسه دیجیتال (DOI): 10.30495/jopn.2021.4776

نویسندگان

Maryam Amirhoseiny^{* 1}؛ Ghasem Alahyarizadeh²

¹Faculty of Engineering Science and Engineering Physics, Buein Zahra Technical University, Buein Zahra, Qazvin, Iran

²Engineering Department, Shahid Beheshti University, G.C., P.O. Box 1983969411, Tehran, Iran

تاریخ دریافت: 13 مرداد 1399،  تاریخ بازنگری: 19 دی 1399،  تاریخ پذیرش: 14 فروردین 1400 

چکیده

Abstract The performance characteristics of InGaN double-quantum-well (DQW) laser diodes (LDs) with different last barrier structures are analyzed numerically by Integrated System Engineering Technical Computer Aided Design (ISE TCAD) software. Three different kind of structures for last quantum barrier including doped- GaN, doped- AlGaN and GaN/AlGaN superlattice last barrier are used and compared with conventional GaN last barrier in InGaN-based laser diodes. Replacing the conventional GaN last barrier with p-AlGaN increased hole flowing in the active region and consequently the radiative recombination which results in the enhancement of output power. However it caused increasing the threshold current due electron overflowing. For solving this problem, the last barrier structure altered with GaN/AlGaN superlattice. The simulation indicates that the electrical and optical characteristics of LDs with the superlattice last barrier, like output power, differential quantum efficiency (DQE) and slope efficiency, has significantly improved, besides the threshold current decreased. The enhancement is mainly attributed to the improvement of hole injection and the blocking electron overflowing which are caused by the reduction of polarization charges at the interface between the barrier and well, and electron blocking layer (EBL).

کلیدواژه‌ها

InGaN quantum well laser؛ superlattice last barrier؛ electrical and optical properties؛ numerical simulation

سایر فایل های مرتبط با مقاله

107-120 Amirhoseiy.pdf

107-120 Amirhoseiy.pdf

مراجع

• Wang, X.Wang, Q.Tan, and X.Zeng, "V-defects formation and optical properties of InGaN/GaN multiple quantum well LED grown on patterned sapphire substrate", Materials Science in Semiconductor Processing, 29 (Jan.2015) 112-116.
• F.Yang, F.Xie, Y.Y.Tong, P.Chen, Z.G.Yu, D.W.Yan, J.J.Xue, H.X.Zhu, Y.Guo, G.H.Li, and S.M.Gao, "Formation of nanorod InGaN/GaN multiple quantum wells using nickel nano-masks and dry etching for InGaN-based light-emitting diodes", Materials Science in Semiconductor Processing, 30 (Feb. 2015) 694-706.
• Nakamura, M.Senoh, S.I.Nagahama, N.Iwasa, T.Matsushita, and T.Mukai, "Blue InGaN-based laser diodes with an emission wavelength of 450 nm", Applied Physics Letters, 76(1) (Nov. 2000) 22-24.
• Y.Huang, Y.D.Lin, A.Tyagi, A.Chakraborty, H.Ohta, J.S.Speck, S.P.DenBaars, and S.Nakamura, "Optical waveguide simulations for the optimization of InGaN-based green laser diodes", Journal of Applied Physics, 107(2) (Jan. 2010) 023101-7.
• Mukai, S.Nagahama, T.Kozaki, M.Sano, D.Morita, T.Yanamoto, M.Yamamoto, K.Akashi, and S.Masui, "current status and future prospects of InGaN based laser diodes^", Japan Society of Applied Physics International, 69(1) (Jan. 2000) 5-17.
• Alahyarizadeh, H. Aghajani, H.Mahmodi, R.Rahmani, and Z.Hassan,"Analytical and visual modeling of InGaN/GaN single quantum well laser based on rate equations^, Optics & Laser Technology", 44(1) (Feb. 2012) 12-20.
• C.Zhang, Z.G.Li, P.L.Nie, and Y.X.Wu, "Effect of ultra-rapid cooling on microstructure of laser cladding IN718 coating", Surface Engineering, 29(6) (Nov. 2013) 414-418.
• Gholampour, A.Abdollah-zadeh, L.Shekari, R.Poursalehi and M. Soltanzadeh. "Green Method for Synthesizing Gallium Nitride Nanostructures at Low Temperature". Journal of Optoelectronical Nanostructure. 3 (2018) 51-64.
• Yahyazadeh, and Z.Hashempour, "Numerical Modeling of Electronic and Electrical Characteristics of 0.3 0.7 Al Ga N/GaN Multiple Quantum Well Solar Cells." Journal of Optoelectronical Nanostructures 5.3 (2020): 81-102.
• Alahyarizadeh, M. Amirhoseiny, and Z. Hassan, "Dependence of output emission wavelength and LD performance on barriers material and thickness^" Optik-International Journal for Light and Electron Optics,127(11⁾ (Feb. 2016) 4815-4818.
• J.Ghazai, S.M.Thahab, H.A.Hassan, and Z.Hassan, "A study of the operating parameters and barrier thickness of Al_0.08In_0.08Ga_0.84N/Al_xIn_yGa_1-x-yN double quantum well laser diodes^", SCIENCE CHINA Technological Sciences, 54(1) (Dec. 2011) 47-51.
• Ghadimi, M.Ahmadzadeh, "Effect of variation of specifications of quantum well and contact length on performance of InP-based Vertical Cavity Surface Emitting Laser (VCSEL)". Journal of Optoelectronical Nanostructures, 5(1), (2020), 19-34.
• Y.Ryu, "Numerical investigation on the negative characteristic temperature of InGaN blue laser diodes", Conference on Numerical Simulation of Optoelectronic Devices (NUSOD), IEEE. (July. 2016) 104.
• H.Wang, J.R.Chen, C.H.Chiu, H.C.Kuo, Y.L.Li, T.C.Lu, and S.C.Wang, "Temperature-dependent electroluminescence efficiency in blue InGaN–GaN light-emitting diodes with different well widths", IEEE Photonics Technology Letters, 22(4) (Feb. 2010) 236-238.
• Jian-Yong, Z.Fang, F.Guang-Han, X.Yi-Qin, L.Xiao-Ping, S.Jing-Jing, D.Bin-Bin, Z.Tao, and Z.Shu-Wen, "Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier" Chinese Physics B, 22(11) (Nov. 2013)118504.
• Kuo, F. Chen, J. Chang, M. Huang, B. Liou, and Y. Shih, "Design and Optimization of Electron-Blocking Layer in Deep Ultraviolet Light-Emitting Diodes", IEEE Journal of Quantum Electronics, 56⁽1⁾ (Jan. 2020)1-6.
• Alahyarizadeh, M.Amirhoseiny, Z.Hassan,"Effect of different EBL structures on deep violet InGaN laser diodes performance", Optics and Laser Technology, 76 (JAN. 2016)106-112.
• -K.Kuo, J.-Y.Chang, and M.-L.Chen, "Role of electron blocking layer in III-nitride laser diodes and light-emitting diodes", Proceedings of the SPIE, 7597 (Feb. 2010) 759720 .
• Paliwal, K.Singh, and M.Mathew, "Effects of electron blocking layer configuration on the dynamics of laser diodes emitting at 450 nm", Laser Phys^, 30 (Jan. 2020) 016210.
• Alahyarizadeh, Z.Hassan, S.M.Thahab, M.Amirhoseiny, N.Naderi, "Comparative Study of the Performance Characteristics of Green InGaN SQW Laser Diodes with Ternary AlGaN and Quaternary AlInGaN Electron Blocking Layer", Digest Journal of Nanomaterials and Biostructures. 7 (4) (Nov. 2012) 1869-1880.
• F.Schubert, J.Xu, J.K.Kim, E.F.Schubert, M.H.Kim, S.Yoon, S.M.Lee, C.Sone, T.Sakong, and Y.Park, "Polarization-matched GaInN∕AlGaInN multi-quantum-well light-emitting diodes with reduced efficiency droop", Appl. Phys. Lett., 93 (Aug. 2208) 041102.
• Paliwal, K.Singh, and M.Mathew, "Strain-free GaN/InAlN chirped short-period superlattice electron-blocking layer for 450 nm InGaN laser diode", Laser Phys. 29 (Mar. 2019) 056204^.
• Usman, M.Munsif, A-R.Anwar, "Wedge-shaped electron blocking layer to improve hole transport and efficiency in green light-emitting diodes", Optics Communications, 464 (Feb. 2020)125493^.
• M.Usman, M.Munsif, A-R.Anwar, H.Jamal, S.Malik, and N.U.Islam, "Quantum efficiency enhancement by employing specially designed AlGaN electron blocking layer", Superlattices and Microstructures, 139 (Jan. 2020) 106417.
• Yang, D.Li, J.He, and X.Hu, "Advantage of tapered and graded AlGaN electron blocking layer in InGaN‐based blue laser diodes", Phys. Status Solidi C, 10(3) (Jan. 2013) 346–349.
• J.Tzou, D.W.Lin, C.R.Yu, Z.Yu.Li, Y.K.Liao, B.C.Lin, J.K.Huang, C.C.Lin, T.S.Kao, H.C.Kuo, and C.Y.Chang, "High-performance InGaN-based green light-emitting diodes with quaternary InAlGaN/GaN superlattice electron blocking layer", Optics Express, 24, Issue 11 (May. 2016) 11387-11395.
• Alahyarizadeh, Z.Hassan, S.M.Thahab, F.K.Yam, and A.J.Ghazai, "Numerical study of performance characteristics of deep violet InGaN DQW laser diodes with AlInGaN quaternary multi-quantum barrier electron blocking layer", Opt. Int. J. Light Electron Opt^, 124 (24) (Dec. 2013) 6765-6768 ^.
• Y. Xiong, Y.Q. Xu, S.W. Zheng, F. Zhao, B.B. Ding, J.J. Song, X.P. Yu, T. Zhang, and G.H. Fan, "Advantages of GaN-based light-emitting diodes with p-AlGaN/InGaN superlattice last quantum barrier", Optics Communications, 312 (Feb. 2014) 85-88.
• Alahyarizadeh, Z.Hassan, S.M.Thahab, F.K.Yam, and A.J.Ghazai, "Performance characteristics of deep violet InGaN DQW laser diodes with InGaN/GaN superlattice waveguide layers", Opt. Int. J. Light Electron Opt^, 125 (1) (Jan. 2014) 341-344^.
• Wang, H.Lu, L.Fu, C.He, M.Wang, N.Tang, F.Xu, T.Yu, W.Ge, and B.Shen, Enhancement of optical polarization degree of AlGaN quantum wells by using staggered structure, Optics Express, 24(16) (July. 2016) 18176-18183^.
• Xu, P.Chen, F.L.Jiang, Y.Y.Liu, Z.L.Xie, X.Q.Xiu, X.M.Hua, Y.Shi, R.Zhang, and Y.L.Zheng, "High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier", Chinese Physics B, 26(1) (Jan. 2017) 017803.
• Asif Khan, J.W.Yang, and G.Simin, "Lattice and energy band engineering in AlInGaN/GaN heterostructures", Appl. Phys. Lett, 76 (Jan. 2000) 1161.
• Zhao, G.Liu, and N.Tansu, "Analysis of InGaN-delta-InN quantum wells for light-emitting diodes", Appl. Phys. Lett, 97 (Oct. 2010) 131114.
• Tan, W.Sun, D.Borovac, and N.Tansu, "Large Optical Gain AlInN-Delta-GaN Quantum Well for Deep Ultraviolet Emitters", Scientific reports, 6 (Mar. 2010) 22983.
• A.Arif, H.Zhao, and N.Tansu, "Type-II InGaN-GaNAs quantum wells for lasers applications", Appl. Phys. Lett, 92 (Jan. 2008) 011104^.
• Karan and A.Biswas., "Performance Improvement of Light-Emitting Diodes with W-Shaped InGaN/GaN Multiple Quantum Wells", Communication, Devices, and Computing, 470 (Jul. 2017) 241-251^.
• Usman, U.Mushtaq, D.-G.Zheng, D.-P.Han, M.Rafiq, and N.Muhammad, "Enhanced Internal Quantum Efficiency of Bandgap-Engineered Green W-Shaped Quantum Well Light-Emitting Diode", Appl. Sci, 9 (Jan. 2019) 77.
• M.Tu, C.Y.Chang, S.Ch.Huang, C.H.Chiu, J.R.Chang, W.T.Chang, D.S. Wuu, H.W.Zan, C.C.Lin, H.C.Kuo, and C.P.Hsu, "Investigation of efficiency droop for InGaN-based UV light-emitting diodes with InAlGaN barrier", Appl. Phys. Lett, 98 (May. 2011) 211107.
• R.Chen, S.C.Ling, H.M.Huang, P.Y.Su, T.S.Ko, T.C.Lu, H.C.Kuo, Y.K.Kuo, and S.C.Wang, "Numerical study of optical properties of InGaN multi-quantum-well laser diodes with polarization-matched AlInGaN barrier layers", Appl. Phys, B 95 (Jan. 2009) 145–153^.
• Alahyarizadeh and R.Rahmani, "Enhancement of performance characteristics of violet InGaN DQW laser diodes using InGaN/GaN multilayer barriers", Opt. Int. J. Light Electron Opt, 127 (19) (Jan. 2016) 7635-7641.
• Alahyarizadeh, Z.Hassan, and F.K.Yam, "Improvement of the performance characteristics of deep violet InGaN multiquantum-well laser diodes using step-graded electron blocking layers and a delta barrier", Journal of Applied Physics, 113 (Mar. 2013) 123108.
• Jian-Yong, Z.Fang, F.Guang-Han, X.Yi-Qin, L.Xiao-Ping, S.Jing-Jing, D.Bin-Bin, Z.Tao, and Z.Shu-Wen, "Efficiency enhancement of an InGaN light-emitting diode with a p-AlGaN/GaN superlattice last quantum barrier, Chinese Physics B, 22(11) (Nov. 2013) 118504.
• Xu, P.Chen, F.L.Jiang, Y.Y.Liu, Z.L.Xie, X.Q.Xiu, X.M.Hua, Y.Shi, R.Zhang, and Y.L.Zheng, "High-efficiency InGaN/AlInGaN multiple quantum wells with lattice-matched AlInGaN superlattices barrier", Chinese Physics B, 26(1) (Jan. 2017) 017803.
• Danesh Kaftroudi, "Improving Blue InGaN Laser Diodes Performance with Waveguide Structure Engineering". Journal of Optoelectronical Nanostructures, 4(1), (2019), 1-26.