Performance Optimization of an Electrostatically Doped Staggered Type Heterojunction Tunnel Field Effect Transistor with High Switching Speed and Improved Tunneling Rate

Journal of Optoelectronical Nanostructures

مقاله 2، دوره 7، شماره 1 - شماره پیاپی 25، فروردین 2022، صفحه 19-36   

نوع مقاله: Articles

شناسه دیجیتال (DOI): 10.30495/jopn.2022.29617.1249

نویسندگان

Mahdi Mohammadkhani Ghiasvand؛ Zahra Ahangari^* ؛ Hamed Nematian

Department of Electronic, Yadegar- e- Imam Khomeini (RAH) Shahre Rey Branch, Islamic Azad University, Tehran, Iran.

تاریخ دریافت: 01 دی 1400،  تاریخ بازنگری: 05 اسفند 1400،  تاریخ پذیرش: 10 اسفند 1400 

چکیده

In this paper, we demonstrate an electrostatically doped
junctionless tunnel field effect transistor which is
composed of a staggered band alignment at the
heterojunction. The proposed structure reduces the
tunneling barrier width to have a higher on-sate current
using Ge/GaAs heterojunction at the source-channel
interface. Due to the employment of electrostatically
doped strategy for creating p+-n+ tunneling junction, the
introduced device has low temperature simple fabrication
process. The device has on-state current of 1.5×10-4
(A/μm), subthreshold swing of 5.15 mV/dec and on/off
current ratio of 1.56×1010, manifesting the design of a
fast switching device. In addition, statistical analysis is
conducted to investigate the sensitivity of device
performance with respect to the variation of critical
design parameters. The results demonstrate that gate
workfunction and polarity gate bias are fundamental
design parameters and optimum value should be
determined for them to assess efficient device
performance.

کلیدواژه‌ها

Tunnel Field Effect Transistor؛ Junctionless Transistor؛ Gate Workfunction؛ Tunneling؛ Sensitivity

مراجع

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