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Rahimian, Morteza. (1401). Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension. دوماهنامه علمی - پژوهشی رهیافتی نو در مدیریت آموزشی, 8(1), 13-31. doi: 10.30495/jopn.2023.31255.1274
Morteza Rahimian. "Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension". دوماهنامه علمی - پژوهشی رهیافتی نو در مدیریت آموزشی, 8, 1, 1401, 13-31. doi: 10.30495/jopn.2023.31255.1274
Rahimian, Morteza. (1401). 'Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension', دوماهنامه علمی - پژوهشی رهیافتی نو در مدیریت آموزشی, 8(1), pp. 13-31. doi: 10.30495/jopn.2023.31255.1274
Rahimian, Morteza. Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension. دوماهنامه علمی - پژوهشی رهیافتی نو در مدیریت آموزشی, 1401; 8(1): 13-31. doi: 10.30495/jopn.2023.31255.1274

Controlling Ambipolar Current in a Junctionless Tunneling FET Emphasizing on Depletion Region Extension

Journal of Optoelectronical Nanostructures
مقاله 2، دوره 8، شماره 1 - شماره پیاپی 29، اردیبهشت 2023، صفحه 13-31    اصل مقاله (1.02 M)
نوع مقاله: Articles
شناسه دیجیتال (DOI): 10.30495/jopn.2023.31255.1274
نویسنده
Morteza Rahimian*
Faculty of Electrical, Biomedical and Mechatronics Engineering, Qazvin Branch, Islamic Azad University, Qazvin, Iran
تاریخ دریافت: 30 آبان 1401،  تاریخ بازنگری: 08 اردیبهشت 1402،  تاریخ پذیرش: 12 شهریور 1402 
چکیده
Abstract:
For the first time, in this research, we introduce a
junctionless tunneling FET (J-TFET) on a uniform p+
starting junctionless FET to realize appreciable immunity
against inherent high ambipolar current (Iamb). So, we
utilize two isolated gates with appropriate workfunctions
over the channel and drain regions to create P+IP+N+
charge distribution. This structure utilizes a space
between the gate-drain electrodes (SGD), to provide a
P+IP+N+ structure thanks to the effective electrons
depletion on the drain side. Increasing the SGD, further
effectively pulls up the bands near the interface between
the channel-drain regions, widens the tunneling width for
tunneling to occur, and thus in turn reduces the Iamb from
5.37×10-7 A/µm to 1.14×10-14 A/µm. Thus, we point out
that the proposed J-TFET can obtain on-current that
satisfies the expectation of logic applications with high
performance and Ioff that meets the specifications of low
power characteristics, a phenomenon that is rarely
accessible with conventional TFETs.
کلیدواژه‌ها
Junctionless tunneling field effect transistors (J-TFETs)؛ Band-toband tunneling (BTBT)؛ Ambipolar current؛ Depletion region؛ Tunneling barrier width
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