Investigating the Photocarrier Transmission Mechanism and the Effect of the Deposition Conditions on IBC-SHJ Solar Cell Efficiency

Journal of Optoelectronical Nanostructures

مقاله 2، دوره 8، شماره 4 - شماره پیاپی 32، بهمن 2023، صفحه 25-50   

نوع مقاله: Articles

شناسه دیجیتال (DOI): 10.30495/jopn.2023.32064.1293

نویسندگان

Pegah Paknazar¹؛ Maryam Shakiba^{* 2}

¹Jundi-Shapur University of Technology, Dezful, Iran

²Department of computer and Electrical Engineering, Jundi shapur University of Dezful, Dezful, Iran

تاریخ دریافت: 08 تیر 1402،  تاریخ بازنگری: 03 آبان 1402،  تاریخ پذیرش: 10 آذر 1402 

چکیده

Abstract :




In this research, the photocarrier transmission mechanism and the effect of the deposition conditions on the IBC-SHJ cell efficiency have been studied. In this regard, short-circuit current density, open-circuit voltage, fill factor and cell efficiency values have been extracted using J–V curves for various deposition parameters. The optimization of the front SRV, the thickness and doping concentration of the c-Si substrate, the thickness and doping concentration of i-a-Si layers, the doping concentration of the emitter region, the width and the doping concentration of the n- and p-strip, the gap width between electrodes and the doping concentration of the BSF region have been carried out to achieve optimum efficiency in the IBC-SHJ solar cell. In addition, the investigation of the electric field distribution in photocarrier transmission to the interdigitated back contacts has also been comprehensively studied. The results show that the n- and p-stripe width and their doping concentration were the most influential parameters for efficiency improvement. Finally, the cell efficiency of improved IBC-SHJ structure achieved 23.52%.

کلیدواژه‌ها

Short-circuit current density؛ Open-circuit voltage؛ Fill factor؛ Cell efficiency؛ IBC-SHJ solar cell

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