Investigation the ion Argon and Nitrogen effect on the transport characteristics of implanted Tantalum interfaces of multilayers

Journal of Optoelectronical Nanostructures

مقالات آماده انتشار، پذیرفته شده، انتشار آنلاین از تاریخ 25 فروردین 1404

نوع مقاله: Articles

شناسه دیجیتال (DOI): 10.30495/jopn.2025.30087.1261

نویسندگان

amir hoshang ramezani^{* 1}؛ zhaleh ebrahiminezhad²

¹Departmen of physics , West Tehran Branch ., Tehran -iran

²Department of Physics, West Tehran Branch, Islamic Azad University, Tehran, Iran

تاریخ دریافت: 07 اسفند 1400،  تاریخ بازنگری: 01 اسفند 1403،  تاریخ پذیرش: 11 اسفند 1403 

چکیده

The present paper examines the influence of ion type Nitrogen and Argon on the transportation through the structures. The interfaces of structures have been created through the ion implantation process. The interfaces consist of Tantalum layers that undergo bombardment by Argon and Nitrogen ions. The energy of the ion has been taken into account at 30 keV. The outcomes have been obtained at varying doses under room temperature conditions.

In order to study the morphology of the ion implanted rough thin films, the Atomic Force Microscopy analysis applied. The average value of roughness calculated. Reducing the transmission probability is the main result of the structures rough interfaces. The obtained results illustrate that the produced interfaces by Argon ion implantation, were rougher than Nitrogen ones. Moreover in both two cases, the peak to valley ratio reduces. Additionally, as the dose of Nitrogen ion increases, the current density decreases as a function of voltage

کلیدواژه‌ها

tantalum؛ interface؛ nitrogen؛ ion