Electronic and Optical Properties of SnGe and SnC Nanoribbons: A First-Principles Study

Journal of Optoelectronical Nanostructures

مقاله 5، دوره 5، شماره 4 - شماره پیاپی 20، بهمن 2020، صفحه 67-86   

نوع مقاله: Articles

نویسندگان

samira damizadeh¹؛ Maryam Nayeri^{* 2}؛ Forough Kalantari Fotooh³؛ somayeh fotoohi⁴

¹Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran.

²Department of Electrical Engineering, Yazd Branch, Islamic Azad University, Yazd, Iran

³Department of Chemistry, Yazd Branch, Islamic Azad University, Yazd, Iran

⁴Department of Electrical Engineering, Islamshahr Branch, Islamic Azad University, Islamshahr, Iran

تاریخ دریافت: 08 آذر 1399،  تاریخ بازنگری: 12 دی 1399،  تاریخ پذیرش: 19 بهمن 1399 

چکیده

Structural, electronic, and optical properties of one-dimensional (1D) SnGe
and SnC with two types (armchair and zigzag) and different widths are studied by using
first-principles calculations. The atoms of these structures in edges are passivated by
hydrogen. The results show armchair SnGe and SnC nanoribbons (A-SnXNRs, X=Ge, C)
are the direct semiconducting and divided into three distinct families W=3p, W=3p+1,
and W=3p+2, (p is a positive integer). By increasing width, the band gaps converge to
1.71 eV and 0.15 eV for A-SnCNRs and A-SnGeNRs, respectively. Furthermore, the
position of the first peak of the dielectric function in both of them occurs in their value of
direct band gap at أ point. also, the absorption coefficient for 9, 11, 13 A-SnCNRs
displays that there is no absorption at the lower energy range from 0 to 1.2 eV, whereas
absorption characteristics for 9, 11, and 13 A-SnGeNRs appeared at near-infrared to the
visible spectrum. These results can provide important information for the use of Group
IV binary compounds in electronic devices.

کلیدواژه‌ها

SnC and SnGe nanoribbon؛ Electronic properties؛ Dielectric function؛ First-principles study

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